XPS investigations of thin epitaxial and magnetron tin layers surface physico-chemical state
Abstract
Thin layers of the tin-oxygen system with nanometer thicknesses and structures based on them are relevant objects of development for use in modern devices, for example in microelectronics. The general miniaturization of electronic devices, the achievement of energy efficiency in the operation of such devices, and the optimal modes of their operation determine the strategies for using the tin-oxygen system structures. First of all, the justification of the tin-oxygen system nanolayers formation technique. The dependence of the formed nanolayers properties on the state of their surface is significant.
The article contains the results of direct experimental studies of the composition and physico-chemical state of the tinoxygen system thin nanolayers surface. To form the studied structures, the popular and in-demand methods of magnetron sputtering and molecular beam epitaxy were used. The X-ray photoelectron spectroscopy was applied with the use of the synchrotron radiation which has a high intensity and the possibility of spectrum excitation energy optimal selection, which is important for a small amount of the studied material. After formation, the research objects were stored in laboratory conditions for several weeks before synchrotron studies.
Differences in the surface composition and physico-chemical state of the thin tin layers formed by magnetron sputtering or epitaxially, and then oxidized naturally, are shown. Five monolayers of tin formed by the molecular beam epitaxy make it possible to diffuse atmospheric oxygen, which oxidizes the Si buffer layer located under the Sn nanolayer on a silicon substrate. At the same time, the surface of the tin film obtained by magnetron sputtering is close to the natural oxide SnO2-x in its physico-chemical state.
The results of the work can be useful for determining the optimal approaches to the formation and subsequent modification of thin and ultrathin layers of tin oxides for the tasks of creating active layers of modern electronic devices
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References
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