Spectromicroscopic Studies of Porous Silicon Oxide on Silicon Using Synchrotron Radiation

  • Elena V. Parinova Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0003-2817-3547
  • Dmitry Marchenko Helmholtz Zentrum Berlin, 15 Albert Einstein str., Berlin 12489, Germany
  • Aleksander K. Fedotov Institute for Nuclear Problems, Belarusian State University, 11 Bobruiskaya str., Minsk 220030, Belarus
  • Dmitry A. Koyuda Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation
  • Julia A. Fedotova Institute for Nuclear Problems, Belarusian State University, 11 Bobruiskaya str., Minsk 220030, Belarus https://orcid.org/0000-0002-4471-0552
  • Ruslan Ovsyannikov Helmholtz Zentrum Berlin, 15 Albert Einstein str., Berlin 12489, Germany https://orcid.org/0000-0001-6311-5516
  • Sergey Yu. Turishchev Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation https://orcid.org/0000-0003-3320-1979
Keywords: silicon dioxide, submicron pores, atomic and electronic structure, synchrotron radiation, XANES, Photoemission Electron Microscopy, local atomic surrounding.

Abstract

This work is dedicated to microscopic synchrotron studies of the morphology, atomic, and electronic structure of an array of submicron-sized pores in a SiO2 layer on silicon formed with the use of ion-track technology in combination with chemical etching after irradiation. The research method was photoemission electron microscopy using high-intensity synchrotron radiation. The method was used in two modes. The use of chemically selective electron microscopy allowed obtaining morphological information about the studied array of pores. The X-ray spectroscopy mode of the synchrotron radiation of
X-rays absorption near-edge fi ne structure spectroscopy allowed us to obtain information about the specifi city of the local surrounding of the given atoms from microscopic regions of nanometer and submicron areas of the obtained microscopic images. The pores had rather sharp boundaries, without a transition layer. The bottom of the pores was a substrate - a crystalline silicon wafer covered with a natural 2-3 nm thick oxide layer. Ion irradiation and chemical etching did not signifi cantly affect the structural and phase characteristics of the porous silicon oxide matrix. There was no signifi cant disordering in the silicon atoms available at the bottom of individual pores. There was no technological contamination.
The effi ciency of using ion-track technology in combination with chemical etching after irradiation for the formation of isolated pores arrays with close submicron range sizes was shown. The obtained results demonstrated the effi ciency of the photoemission electron microscopy method using high-intensity synchrotron radiation for the high accuracy microscopic scale study of a wide range of objects with the composite structure-phase nature of the surface.

 

 

 

 

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Author Biographies

Elena V. Parinova, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

PhD in Physics and Mathematics, Researcher of the Joint Laboratory “Electronic Structure of Solids”, Voronezh State University, Voronezh, Russian Federation; e-mail: parinova@phys.vsu.ru.

Dmitry Marchenko, Helmholtz Zentrum Berlin, 15 Albert Einstein str., Berlin 12489, Germany

PhD in Physics and Mathematics, Researcher of the Helmholtz Zentrum Berlin, Berlin,
Germany; e-mail: marchenko.dmitry@gmail.com.

Aleksander K. Fedotov, Institute for Nuclear Problems, Belarusian State University, 11 Bobruiskaya str., Minsk 220030, Belarus

DSc in Physics and Mathematics, Professor, Belarusian State University,
Minsk, Belarus; e-mail: fedotov@bsu.by.

Dmitry A. Koyuda, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

Researcher Associate of the Joint Laboratory “Electronic Structure of Solids”, Voronezh
State University, Voronezh, Russian Federation; email: koyuda@phys.vsu.ru.

Julia A. Fedotova, Institute for Nuclear Problems, Belarusian State University, 11 Bobruiskaya str., Minsk 220030, Belarus

DSc in Physics and Mathematics, Deputy Head, Institute for Nuclear Problems,
Belarusian State University, Minsk, Belarus; e-mail: julia@hep.by.

Ruslan Ovsyannikov, Helmholtz Zentrum Berlin, 15 Albert Einstein str., Berlin 12489, Germany

PhD, Scientist of the Helmholtz Zentrum Berlin, Berlin, Germany; e-mail:
ovsyannikov@helmholtz-berlin.de.

Sergey Yu. Turishchev, Voronezh State University, 1 Universitetskaya pl., Voronezh 394018, Russian Federation

DSc in Physics and Mathematics, Associate Professor of the Solid State Physics and Nanostructures Department, Voronezh State University, Voronezh, Russia; e-mail: tsu@phys.vsu.ru.

Published
2020-03-20
How to Cite
Parinova, E. V., Marchenko, D., Fedotov, A. K., Koyuda, D. A., Fedotova, J. A., Ovsyannikov, R., & Turishchev, S. Y. (2020). Spectromicroscopic Studies of Porous Silicon Oxide on Silicon Using Synchrotron Radiation. Kondensirovannye Sredy I Mezhfaznye Granitsy = Condensed Matter and Interphases, 22(1). https://doi.org/10.17308/kcmf.2020.22/2532
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