PECULIARITIES OF FORMATION AND OPTICAL PROPERTIES OF NANO-, MESO- AND MACROPOROUS SILICON
Abstract
Some features of formation of porous silicon, its morphology and composition, as well as
its optical properties were investigated in this work. Porous silicon was obtained on the substrates of
single-crystalline Si as well as on the structures with p-n junctions. In order to obtain different structures
of nano-, meso- and macroporous silicon as well as multi-layered porous structures several
technological parameters were changed — orientation of substrates, conductivity type and composition
of the etching solution. Correlation between photoluminescence intensity of the obtained
samples and intensity of the absorption band in their IR spectra (the band at 616 cm–1) that is due to
the presence of Si-Si bonds in porous layer. The influence of porous silicon storage in the air on the
degradation of photoluminescence parameters of porous silicon was estimated.
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2. Lazaruk S. K., Leshok A. A., Labunov V. A. // Fizika i Tekhnika Polupr. 2005. V. 39. Iss. 1. P. 149—152.
3. Lazaruk S. K., Dolbik A. V., Labunov V. A. // Fizika i Tekhnika Polupr. 2007. V. 41. Iss. 9. P. 1130—1134.
4. Goryachev D. N., Belyakov D. N., Sreseli O. M. // Fizika i Tekhnika Polupr. 2010. V. 44. Iss. 12. P. 1636—1639.
5. Aktsipetrov O. A., Dolgova T. V., Soboleva I.V // Fizika Tverdogo Tela. 2005. V. 47. Iss. 1. P. 150—152.
6. Astrova E. V., Borovinskaya T. N., Perova T. S. // Fizika i Tekhnika Polupr. 2004. V. 38. Iss. 9. P. 1121—1124.
7. Zharova Yu.A., Fedulova G. V., Astrova E. V. // Fizika i Tekhnika Polupr. 2011. V. 45. Iss. 8. P. 1136—1143.
8. Moshnikov V. A., Gracheva I. E., Lenshin A. S. // J. of Non-Crystalline Solids. 2012. V. 358. Iss. 3. P. 590—595.
9. Kashkarov V. M., Lenshin A. S., Seredin P. V. // Poverkhnost’. Rentgenovskie, Sinchrotronnye i Neitronnye Issledovaniya. 2012.. № 9. P. 80—86.
10. Lenshin A. S., Kashkarov V. M., Tsipenyuk V. N., Seredin P. V. // Zhurn. Tekhnich. Fiziki. 2013. V. 83. Iss. 2. P. 36—140.
11. Lenshin A. S., Kashkarov V. M., Turishchev S. Yu., Smirnov M. S., Domashevskaya E. P. // Pis’ma v Zhurn. Tekhn. Fiziki. 2011. V. 37. Iss. 17. P. 1—8.
12. Lenshin A. S., Kashkarov V. M., Seredin P. V. // Fizika i Tekhnika Polupr. 2012. V. 46. Iss. 8. P. 1101—1107.
13. Lenshin A. S., Kashkarov V. M., Minakov D. A. // Zhurn. Tekhnich. Fiziki. 2013. V. 83. Iss. 3. P. 96—100.
14. Kashkarov V. M., Lenshin A. S., Seredin P. V., Minakov D. A. // Izvestiya Vuzov. Materiali Elektronnoi Tekhniki. 2013. № 2. P. 55—59.
15. Canham L. T. // Appl. Phys. Lett. 1990. V. 57. № 10. P. 1046—1048.
16. Korsunskaya N. E., et al. // Fizika i Tekhnika Polupr. 2010. V. 44. Iss. 1. P. 82—86.
17. Salonen J., et al. // Appl. Surf. Sci. 1997. V. 120. P. 191—198.
18. Lenshin A. S., Kashkarov V. M., Seredin P. V. // Fizika i Tekhnika Polupr. 2011. V. 45. Iss. 9. P. 1229—1234.
19. Domashevskaya E. P., Terekhov V. A., Kashkarov V. M., et al. // Khimia Poverkhnosti i Sintez Nizkorazmernykh Sistem: Sbornik nauchn. trudov. SPb., 2002. P. 29—40.
20. Lenshin A. S. Features of formation of porous silicon and its nanocomposites. Saarbrücken: Lap Lambert Academic Publishing, 2013. 218 p.
